首页> 外国专利> METHOD OF INCREASING LUMINESCENCE UNIFORMITY AND REDUCING AFTERGLOW BY MEANS OF CE-DOPED GADOLINIUM-ALUMINUM-GALLIUM GARNET STRUCTURE SCINTILLATION CRYSTAL, CRYSTAL MATERIAL AND DETECTOR

METHOD OF INCREASING LUMINESCENCE UNIFORMITY AND REDUCING AFTERGLOW BY MEANS OF CE-DOPED GADOLINIUM-ALUMINUM-GALLIUM GARNET STRUCTURE SCINTILLATION CRYSTAL, CRYSTAL MATERIAL AND DETECTOR

机译:用掺铈钆铝镓石榴石结构闪烁晶体、晶体材料和探测器提高发光均匀性和减少余辉的方法

摘要

A method of increasing luminescence uniformity and reducing afterglow by means of a Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, a crystal material, and a detector are disclosed. Sc ions are incorporated into the crystal material, and the Sc ions occupy at least an octahedral site. The effective segregation coefficient of the active Ce ions is increased by means of a radius compensation effect of Sc-Ce ions and the adjustment of unit cell parameters, thereby increasing the luminescence uniformity of the crystal and optimizing energy resolution. At the same time, the potential barrier for Gd ions entering octahedral sites is increased, reducing the probability of Gd ions entering the octahedral sites, thereby decreasing the density of point defects in the crystal and reducing the afterglow intensity of the crystal. The general formula of the Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal is {Gd1-x-y-pScxCeyMep}3[Al1-qGaq]5O12, in which 0 < x ≤ 0.1, 0 < y ≤ 0.02, 0 ≤ p ≤ 0.02, and 0.4 ≤ q ≤ 0.7.
机译:本发明公开了一种通过掺铈钆铝镓石榴石结构闪烁晶体、晶体材料和检测器来增加发光均匀性和减少余辉的方法。Sc离子并入晶体材料中,并且Sc离子占据至少一个八面体位置。通过Sc-Ce离子的半径补偿效应和晶胞参数的调整,提高了活性Ce离子的有效偏析系数,从而提高了晶体的发光均匀性,优化了能量分辨率。同时,Gd离子进入八面体位置的势垒增加,降低了Gd离子进入八面体位置的概率,从而降低了晶体中点缺陷的密度,降低了晶体的余辉强度。掺铈钆铝镓石榴石结构闪烁晶体的通式为{Gd1-x-y-pScxCeyMep}3[Al1-qGaq]5O12,其中0

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