DIFFERENT POLYRASTER MEASURES FOR PROGRESS INTEGRATED CIRCLE STRUCTURE MANUFACTURE

摘要

embodiments of the disclosure lie in the field of advanced integrated circuit structure manufacturing and in particular integrated circuit structure manufacturing for the 10-nanometer node and smaller and the resulting structures. In one example, an integrated circuit structure first contains several logikglatter structures having a first grid dimension between adjacent of the first several logic lattice structures. The integrated circuit structure also includes second multiple logic gate structures having a second grid dimension between adjacent of the second plurality logic gate structures. The second raster dimension is larger than the first raster dimension.