SELF-JUSTIFIED TRAINING OF A SILICIUM CARBID CONTACT USING A PROTECTION SHEET

摘要

Method for generating a contact structure for a semiconductor device having:Providing a silicon carbide substrate (100) comprising: a doped silicon carbide contact area (106) adjacent directly to a main surface (102) of the substrate (100), and a dielectric layer (112) covering the main surface (102);Creating a protective layer (116) on the dielectric layer (112),Creating a structured mask (118) on the protective layer (116), wherein the structured mask (118) has openings (120) aligned to the doped silicon carbide contact area (106); andremoving portions of the protective layer (116) and dielectric layer (112) exposed through the openings (120), without removing remaining portions of the protective layer (116) and dielectric layer (112) located below the mask (118);removing the structured mask (118);Deposition of a metal layer (124) such that a first part (126) of the metal layer (124) directly contacts the doped silicon carbide contact area (106) and a second part (128) of the metal layer (124) coats the remaining portions of the protective layer (116) and the dielectric layer (112);Perform a first rapid thermal heat treatment process at a temperature between 600 °C and 800 °C and a duration of no more than two minutes;after performing the first rapid thermal heat treatment process, removing the second part (128) of the metal layer (124) and the remaining portion of the protective layer (116), without removing the first part (126) of the metal layer (124); andPerform a second thermal heat treatment process after removing the second part (128) of the metal layer (124), wherein the first part (126) of the metal layer (124) continues to silicify with the doped silicon carbide contact area (106),where a thermal budget of the second thermal heat treatment process is greater than a thermal budget of the first thermal heat treatment process.