HIGH-HEAT DISSIPATION IGBT POWER SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREFOR

摘要

A power semiconductor package of the present invention may comprise: a power semiconductor chip; a copper layer disposed under the power semiconductor chip; an epoxy insulating layer disposed under the copper layer; a metal base plate disposed under the epoxy insulating layer; and a heat sink disposed under the metal base plate, wherein the epoxy insulating layer comprises an aminophenol-based epoxy resin.