The invention relates to a method for producing PERT solar cells (10), having the steps of providing an n-doped or p-doped silicon substrate (1), carrying out a first doping process, by means of which at least one side of the silicon substrate (1) is doped or at least one doped layer is applied to one side of the silicon substrate (1), in order to create a first doped side, precipitating at least one substance (5) passivating or masking the surface at least on the first doped side of the PERT solar cell (10), carrying out a second doping process, by means of which at least the other side of the silicon substrate (1), opposite the first doped side, is doped, or a doped layer is applied thereto, wherein, after carrying out said steps, the edges (11, 12) of the PERT solar cell (10) are wet chemical etched, wherein, during the wet chemical etching, the other side of the PERT solar cell (10), opposite the first doped side, is protected by a water cover (4) and the first doped side of the PERT solar cell is protected by the substance (5) passivating or masking the surface and sintered by a high temperature treatment before the wet chemical etching of the edges (11, 12).
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