VARIABLE-RESISTANCE-TYPE NON-VOLATILE STORAGE DEVICE AND WRITE METHOD THEREOF

摘要

This variable-resistance-type non-volatile storage device comprises a variable resistance element (RSE) capable of reversibly changing the state of resistance between a high resistance state and a low resistance state, and a current supply circuit (24) which passes, to the variable resistance element, a resistance-lowering current for changing the state of resistance from the high resistance state to the low resistance state, wherein: a current waveform of the resistance-lowering current includes, in a time axis, a first period and a second period subsequent to the first period; with the resistance-lowering current, a first current is applied to the variable resistance element in the first period, and a second current smaller than the first current is applied to the variable resistance element in the second period; and the first current at the end of the first period is not zero, and the second current at the start of the second period is not zero.