INNOVATION IN HIGH PERFORMANCE ELECTRO-CHROMIC DEVICE MANUFACTURING METHOD

摘要

The invention relates to the manufacturing method of high performance electro-chromic devices containing transition metal oxide based compounds, wherein it comprises the steps of enlarging of the metal contact with Pt (Platinum) (1) sputtering method on one edge of the 80-150 nm thick Indium-Tin oxide alloy (ITO) (2), which was previously enlarged on the glass (3) by the sputter method, growing vertical nano-wall structures at 15-25 mTorr, 300-500 °C substrate temperature and a t 3-45 minutes intervals on glass (3) with sputter method, by using transition metal chalcogen targets on previously enlarged ITO (2) with a thickness of 80-150 nm, oxidizing the grown structures in the oxidizing furnace for 10-60 minutes under oxygen gas in the temperature range 300-450 °C, preparing the electro-chromic device by placing a counter glass/ITO (80-150 nm) in propylene carbonate (PC) to face 1 Mole/Liter Lithium perchlorate (LiClO4) ion-conducting electrolyte (6) with a 0.5-1 mm distance between them and closing it.