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ELECTRODEPOSITION OF NANOTWINNED COPPER STRUCTURES

机译:纳米线铜结构的电沉积

摘要

A copper structure having a high density of nanotwins is deposited on a substrate. Electroplating conditions for depositing a nanotwinned copper structure may include applying a pulsed current waveform that alternates between a constant current and no current, where a duration of no current being applied is substantially greater than a duration of a constant current being applied. In some implementations, the nanotwinned copper structure is deposited by applying a pulsed current waveform followed by a constant current waveform. In some implementations, the nanotwinned copper structure is deposited on a highly-oriented base layer, where an electroplating solution contains an accelerator additive. In some implementations, the nanotwinned copper structure is deposited on a non-copper seed layer. In some implementations, the nanotwinned copper structure is deposited at a relatively low flow rate.
机译:沉积具有高密度的铜结构沉积在基板上。 用于沉积纳米线的铜结构的电镀条件可以包括施加脉冲电流波形,其在恒定电流和无电流之间交替,其中施加的持续时间基本上大于施加恒定电流的持续时间。 在一些实施方案中,通过施加脉冲电流波形,然后施加恒定电流波形来沉积纳米电铜结构。 在一些实施方案中,纳米型铜结构沉积在高度取向的基础层上,其中电镀溶液含有加速剂添加剂。 在一些实施方案中,纳米电铜结构沉积在非铜种子层上。 在一些实施方式中,以相对低的流速沉积纳米型铜结构。

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