ADJUSTABLE HOMOJUNCTION FIELD EFFECT DEVICE-BASED ARTIFICIAL SYNAPTIC CIRCUIT AND IMPLEMENTATION METHOD THEREFOR

摘要

An adjustable homojunction field effect device-based artificial synaptic circuit, and a function implementation method therefor. The circuit comprises a first adjustable homojunction field effect device M1, a second adjustable homojunction field effect device M2, a third adjustable homojunction field effect device M3, and a capacitive element C, wherein the adjustable homojunction field effect devices can represent electrical properties of an NN junction, a PP junction, a PN junction, and an NP junction under the regulation and control of gate voltage; the on-state of the second adjustable homojunction field effect device M2 and the on-state of the third adjustable homojunction field effect device M3 in the circuit are determined by the combined action of a bionic presynaptic pulse and a bionic postsynaptic pulse. Compared with conventional MOS circuit solutions, a circuit structure that shows neural synapse functions of spike timing dependent plasticity and continuous adjustment of synaptic weight by pulses requires a greatly reduced number of devices and represents the property of a reconfigurable function, thus showing great advantages in constructing low-power-consumption and high-density integrated bionic chips for future neuromorphic applications.