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TRANSPARENT RESONANT-TUNNELING DIODE AND METHOD FOR PRODUCING SAME

机译:透明谐振隧道二极管及其制造方法

摘要

The invention relates to a resonant-tunneling diode (10) comprising an electrically insulating substrate (12), a metal layer (14), and a transition metal oxide layer (16). The metal layer (14) is applied onto the substrate (12), and the transition metal oxide layer (16) is applied onto the metal layer (14). The metal layer (14) and the transition metal oxide layer (16) have an amorphous structure. The invention additionally relates to a method for producing a resonant-tunneling diode (10) comprising an electrically insulating substrate (12), a metal layer (14), and a transition metal oxide layer (16), having the steps of: a) providing the substrate (12), b) coating the provided substrate (12) with the metal layer (14) using a direct sputtering process such that the metal layer (12) has an amorphous structure, and c) coating the metal layer (14) with the transition metal oxide layer (16) using a reactive sputtering process such that the transition metal oxide layer (16) has an amorphous structure.
机译:本发明涉及一种包括电绝缘基板(12),金属层(14)和过渡金属氧化物层(16)的谐振隧穿二极管(10)。将金属层(14)施加到基板(12)上,并且将过渡金属氧化物层(16)施加到金属层(14)上。金属层(14)和过渡金属氧化物层(16)具有非晶结构。本发明另外涉及一种制造具有电绝缘基板(12),金属层(14)和过渡金属氧化物层(16)的谐振隧穿二极管(10)的方法,其中包括:a)提供基板(12),B)使用直接溅射工艺与金属层(14)涂覆所提供的基板(12),使得金属层(12)具有非晶结构,C)涂覆金属层(14使用过渡金属氧化物层(16)使用反应性溅射工艺,使得过渡金属氧化物层(16)具有非晶结构。

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