Wiring structure, semiconductor device, method of operating active element, method of manufacturing wiring structure, method of using wiring structure, and method for controlling wiring resistance of wiring structure

摘要

Problem to be solved: to provide a wiring structure capable of suppressing an increase in the resistance value of the wiring layer accompanying the miniaturization.The wiring structure 1 according to the present disclosure isMetal elements as principal componentsWiring layer 10 extending in one directionMetal layer 20 opposing to interconnection layer 10Located between the wiring layer 10 and the metal layerThe solid electrolyte layer 30 is in contact with the wiring layer 10 and the metal layer 20 in the cross-sectional view at least when cut in a plane perpendicular to the one direction, and theEquipped withThe side surface of the wiring layer 10 and the side surface of the solid electrolyte layer 30 are in surface contact with each other.The side surface of the solid electrolyte layer 30 and the side surface of the metal layer 20 are in surface contact with each otherThe wiring layer 10 and the metal layer 20 areElectrically insulated from the solid electrolyte layer 30.Diagram