A PV device comprises a first mirror comprising a reflectance of higher than 50%; a second mirror interface; and an optical cavity positioned between the first mirror and the second mirror interface and comprising at least one IC stage. Each of the at least one IC stage comprises a conduction band; a valence band; a hole barrier comprising a first band gap; an absorption region coupled to the hole barrier, comprising a second band gap that is less than the first band gap, and configured to absorb photons; and an electron barrier coupled to the absorption region so that the absorption region is positioned between the hole barrier and the electron barrier. The electron barrier comprises a third band gap that is greater than the second band gap. The PV device is configured to operate at a forward bias voltage with a net photon absorption for generating an electric output.
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