Melt-growth of single-crystal alloy semiconductor structures and semiconductor assemblies incorporating such structures

摘要

A method of fabricating at least one single-crystal alloy semiconductor structure. At least one seed, containing an alloying material, on a substrate for growth of at least one single-crystal alloy semiconductor structure is formed. At least one structural form, formed of a host material, on the substrate is crystallized to form the at least one single-crystal alloy semiconductor structure. The at least one structural form is heated such that the material of the at least one structural form has a liquid state. Also, the at least one structural form is cooled, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in a main body of the respective structural form away from the respective seed.