- SYSTEMS AND METHODS FOR SUPPRESSING PARASITIC PLASMA AND REDUCING WITHIN-WAFER NON-UNIFORMITY

摘要

A substrate processing system for depositing a film on a substrate includes a processing chamber defining a reaction volume. The showerhead includes a stem portion having one end connected adjacent an upper surface of the processing chamber. The base portion is connected to the opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of a process gas and a purge gas into the reaction volume. The plasma generator is configured to selectively generate an RF plasma within the reaction volume. The edge tuning system includes a collar and a parasitic plasma reducing element positioned about a stem portion between the collar and the upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.