ARRANGEMENT OF ADJACENT LAYER STRUCTURES FOR A MAGNETORESISTIVE MAGNETIC FIELD SENSOR, MAGNETORESISTIVE MAGNETIC FIELD SENSOR AND METHOD FOR PRODUCING SAME

摘要

The present invention relates to an arrangement of at least two adjacently arranged layer structures for a magnetoresistive magnetic field sensor. In this case, each layer structure comprises at least one antiferromagnetic layer, and a first ferromagnetic layer having a first magnetic moment. There is exchange coupling between the antiferromagnetic layer and the first ferromagnetic layer. Moreover, said structure comprises a second ferromagnetic layer having a second magnetic moment, wherein the second ferromagnetic layer is coupled in antiparallel with the first ferromagnetic layer via a non-magnetic coupling layer arranged between the first and the second ferromagnetic layer. It is proposed that the magnetizations of the corresponding first and corresponding second ferromagnetic layers of the adjacently arranged layer structures deviate from one another, in particular are oriented substantially oppositely to one another. The invention furthermore relates to a magnetoresistive magnetic field sensor comprising such an arrangement of layer structures and to a method for producing the arrangement of layer structures and the magnetoresistive magnetic field sensor.