METHOD FOR PLACING NANO-DIAMONDS WITH NV-CENTERS ON SILICON NITRIDE

摘要

FIELD: nano-photonics.;SUBSTANCE: invention relates to a technology and methods for placing nano-diamonds with NV-centers on optical structures of Si3N4; it can be used in future nano-photonics devices. A method for placing nano-diamonds on structures of silicon nitride includes coating with protective resist with subsequent electronic lithography to form “windows”, in which nano-diamonds must be placed. A nano-diamond solution is kept until complete drying at a constant temperature of 20-24°C or at a temperature increase from 25°C to 70°C during 10-15 minutes. After explosive lithography, nano-diamonds remain at place of “windows” on the surface of silicon nitride.;EFFECT: controlled placement of nano-diamonds with NV-centers in “windows” with low probability of large agglomerate formation.;3 cl, 3 dwg