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Method of manufacture using complementary conductivity-selective wet-etching techniques for III-nitride materials and devices
Method of manufacture using complementary conductivity-selective wet-etching techniques for III-nitride materials and devices
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机译:使用用于III族氮化物材料和装置的互补电导率选择性湿法蚀刻技术制造方法
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摘要
Methods for wet-etching semiconductor samples and devices fabricated from the same are disclosed. The methods can be for selectively wet-etching a semiconductor sample comprising selecting a liquid-phase solution such that when the semiconductor sample is etched with the liquid-phase solution, at least a portion of one of a first doped region or a second doped region is etched at a greater rate than at least a portion of the other of the first doped region or the second doped region; and wet-etching, with the liquid-phase solution, the at least a portion of one of the first doped region or the second doped region at a first etch rate and the at least a portion of the other of the first doped region or the second doped region at a second etch rate; wherein the first etch rate can be greater than the second etch rate.
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