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NANOGAP ELECTRODE STRUCTURE, METHOD FOR MANUFACTURING SAME, ANALYSIS DEVICE AND ANALYSIS METHOD

机译:纳米孔电极结构,制造方法,分析装置和分析方法

摘要

Provided are a nanogap electrode structure that enables stable formation of a nanogap by an easy way, a method for manufacturing the same, an analysis device and an analysis method. The nanogap electrode structure 10 comprises an insulating film 11 that has a nanopore 13, said nanopore allowing the passage of a sample therethrough, and a nanogap electrode 12 that is formed on the insulating film 11 and provided with a nanogap 17 between a pair of electrode parts 14a and 14b. The pair of electrode parts 14a and 14b have an above-nanopore region 15 that is positioned above the nanopore 13, and a connection region 16 that is positioned above the insulating film 11 and connected to the above-nanopore region 15. The nanogap 17 is formed within the above-nanopore region 15.
机译:提供了一种纳米盖电极结构,其能够通过简单的方式实现纳米隙的稳定地形成,一种制造方法,分析装置和分析方法。 纳米孔电极结构10包括具有纳米孔13的绝缘膜11,所述纳米孔允许样品的通过,以及形成在绝缘膜11上的纳米孔电极12,并在一对电极之间设置有纳米孔17 零件14a和14b。 该对电极部分14a和14b具有上方纳米孔区域15,其位于纳米孔13上方,并且连接区域16位于绝缘膜11上方并连接到上述纳米孔区域15 .NANOGAP 17是 形成在上述纳米孔区域15内。

著录项

  • 公开/公告号WO2021241356A1

    专利类型

  • 公开/公告日2021-12-02

    原文格式PDF

  • 申请/专利权人 TEI SOLUTIONS INC.;

    申请/专利号WO2021JP18972

  • 发明设计人 IKEDA SHUJI;HASHIMOTO NAOTAKA;

    申请日2021-05-19

  • 分类号C12M1;C12M1/34;G01N27;

  • 国家 JP

  • 入库时间 2022-08-24 22:36:44

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