METHOD FOR PRODUCING LARGE AREA AMORPHOUS BORON-NITRIDE FILM AND LARGE AREA AMORPHOUS BORON-NITRIDE FILM

摘要

The present invention relates to a method for manufacturing a large-area amorphous boron nitride film and a large-area amorphous boron nitride film, and more particularly, to a method for preparing a large-area amorphous boron nitride film; and growing an amorphous boron nitride film on the substrate at a temperature of 700° C. or less; Including, wherein the step of growing, is to deposit an amorphous boron nitride film on a wafer scale (Wafer-scale), relates to a method for manufacturing an amorphous boron nitride film and an amorphous boron nitride film. In addition, the present invention relates to a semiconductor device including the amorphous boron nitride film.