METHOD AND APPARATUS FOR ESTIMATING JUNCTION TEMPERATURE OF POWER SEMICONDUCTOR DEVICE IN POWER MODULE

摘要

A power semiconductor of a power module comprising a first power semiconductor device disposed adjacent to a heat sink for cooling and having a temperature sensor and a second power semiconductor device disposed adjacent to the first power semiconductor device and not having a temperature sensor. A method for estimating device junction temperature is disclosed. The method for estimating a junction temperature of a power semiconductor device of the power module includes: calculating a predicted value of a junction temperature of the first power semiconductor device based on power loss and thermal resistance of the first power semiconductor device; calculating a junction temperature predicted value of the second power semiconductor device based on power loss and thermal resistance of the second power semiconductor device; calculating a predicted temperature value of the heat sink by subtracting a junction temperature predicted value of the first power semiconductor device from the sensing temperature sensed by the temperature sensor; and finally determining the junction temperature of the second power semiconductor device by adding the predicted temperature of the heat sink to the predicted value of the junction temperature of the second power semiconductor device.