STRUCTURE WITH HIGH THERMAL CONDUCTIVITY AND HIGH MODULE IN A PUTTING MATERIAL LAYER OF AN INTEGRATED CIRCUIT HOUSING

摘要

An integrated circuit assembly can be formed comprising an electronic substrate, at least one integrated circuit device which is electrically attached to the electronic substrate, a potting material layer which lies against the electronic substrate and which substantially surrounds at least one integrated circuit, and at least one structure in the potting material layer, wherein the at least one structure comprises a material with a modulus of more than about 20 gigapascals and a thermal conductivity of more than about 10 watts per meter-Kelvin.