NANOWIRE ARRAY, OPTOELECTRONIC DEVICE, AND MANUFACTURING METHOD THEREFOR

摘要

Provided is a nanowire array. Nanowires in the nanowire array closely adhere to each other and are in contact with each other through a side wall to form a three-dimensional dence layered structure, wherein the nanowires are of an InGaN-based material. Provided is an optoelectronic device having the nanowire array. The nanowire array is epitaxially grown on a surface of a substrate (12). Further provided is a method for manufacturing the nanowire array and the optoelectronic device.