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Hafnium carbide powder for plasma electrodes, its manufacturing method, hafnium carbide sintered body and plasma electrode

机译:用于等离子体电极的碳化铪粉,其制造方法,碳化铪烧结体和等离子体电极

摘要

To provide a hafnium carbide powder for plasma electrode capable of suppressing contamination of carbon particles as impurities and improving quality of the hafnium carbide powder, a manufacturing method therefor, a hafnium carbide sintered body and a plasma electrode.SOLUTION: A hafnium carbide powder for plasma electrode is a powder of hafnium carbide represented by a chemical formula HfC, wherein x=0.5 to 1.0, and having content of carbon particles as impurities of 0.03 mass% or less. Average particle diameter of the hafnium carbide powder is preferably 0.5 to 2 μm. When the hafnium carbide powder is manufactured, for example, a pellet 16 of hafnium oxide and a mixed powder of carbon is housed in a silicon carbide made second crucible 17, the second crucible 17 is arranged in a first crucible 12 and a heating reaction is conducted at 1800 to 2000°C and the hafnium carbide powder can be generated.SELECTED DRAWING: Figure 1
机译:提供一种用于等离子体电极的碳化铪粉末,其能够抑制碳颗粒作为杂质的污染,提高碳化铪粉末的质量,其中的制造方法,碳化铪烧结体和等离子体电极。溶液:血浆碳化铪粉末 电极是由化学式HFC表示的氧化铪的粉末,其中x = 0.5至1.0,并且碳颗粒的含量为0.03质量%或更低的杂质。 碳化铪粉的平均粒径优选为0.5至2μm。 当制造碳化铪粉末时,例如,氧化铪的颗粒16和碳混合粉末被容纳在碳化硅制成的第二坩埚17中,第二坩埚17布置在第一坩埚12中,加热反应是 在1800至2000°C和碳化铪粉末进行,可以产生。选择图:图1

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