首页> 外国专利> HAFNIUM CARBIDE POWDER FOR PLASMA ELECTRODE, MANUFACTURING METHOD THEREFOR, HAFNIUM CARBIDE SINTERED BODY AND PLASMA ELECTRODE

HAFNIUM CARBIDE POWDER FOR PLASMA ELECTRODE, MANUFACTURING METHOD THEREFOR, HAFNIUM CARBIDE SINTERED BODY AND PLASMA ELECTRODE

机译:等离子体电极用碳化CAR粉体,其制备方法,碳化S烧结体和等离子体电极

摘要

PROBLEM TO BE SOLVED: To provide a hafnium carbide powder for plasma electrode capable of suppressing contamination of carbon particles as impurities and improving quality of the hafnium carbide powder, a manufacturing method therefor, a hafnium carbide sintered body and a plasma electrode.;SOLUTION: A hafnium carbide powder for plasma electrode is a powder of hafnium carbide represented by a chemical formula HfCx, wherein x=0.5 to 1.0, and having content of carbon particles as impurities of 0.03 mass% or less. Average particle diameter of the hafnium carbide powder is preferably 0.5 to 2 μm. When the hafnium carbide powder is manufactured, for example, a pellet 16 of hafnium oxide and a mixed powder of carbon is housed in a silicon carbide made second crucible 17, the second crucible 17 is arranged in a first crucible 12 and a heating reaction is conducted at 1800 to 2000°C and the hafnium carbide powder can be generated.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2019,JPO&INPIT
机译:解决的问题:提供一种用于等离子体电极的碳化ha粉末,其能够抑制作为杂质的碳颗粒的污染并提高碳化ha粉末的质量,其制造方法,碳化ha烧结体和等离子体电极。用于等离子体电极的碳化ha粉末是由化学式HfC x 表示的碳化ha粉末,其中x = 0.5至1.0,并且作为杂质的碳颗粒含量为0.03质量%以下。碳化ha粉末的平均粒径优选为0.5〜2μm。例如,在制造碳化f粉末时,将氧化ha和碳的混合粉末的颗粒16容纳在由第二坩埚17制成的碳化硅中,将第二坩埚17置于第一坩埚12中,并进行加热反应。在1800至2000°C的温度下进行操作,可生成碳化ha粉末;选定的图纸:图1;版权:(C)2019,JPO&INPIT

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