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Low noise Geiger-mode avalanche photodiode and manufacturing process
Low noise Geiger-mode avalanche photodiode and manufacturing process
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机译:低噪音地革命模式雪崩光电二极管和制造过程
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摘要
In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.
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