首页> 外国专利> Photonic devices based on intrinsical plasmon exciton polaritons

Photonic devices based on intrinsical plasmon exciton polaritons

机译:基于本型等离子体激子极性恒星的光子器件

摘要

A semiconductor device includes a ribbon having a thickness and a width.The ribbon material is configured to host excitons and plasmons, whose width is an inverse function of the wavenumber value that the energy level of the plasmons in the material is substantially equal to the energy level of the exciton in the material.The substantially equal energy between the plasmon and exciton in the ribbon causes excitation of the intrinsically plasmon exciton polariton (IPEP) in the ribbon.A first contact is electrically coupled to a first position on the ribbon, and a second contact is electrically coupled to a second position on the ribbon.
机译:半导体器件包括具有厚度和宽度的带状。带状材料被配置为主主体和等离子体,其宽度是波数值的逆函数,即材料中的等离子体的能量水平基本上等于能量的逆函数。 材料中的激子水平。在色带中的等离子体和激子之间的基本上相等的能量导致色带中的本质上等离子体激素极谱(IPEP)的激发。第一接触电耦合到带上的第一位置,和 第二触点电耦合到带上的第二位置。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号