A HALF-LEADER MEMBER AND A PROCEDURE TO BE A HALF-LEADER MEMBER

摘要

A semiconductor element (100, 200) complete:a contact metallisation layer (120) mounted on a semiconductor substrate (110);an inorganic passivation structure (130) located on the semiconductor substrate (110);andan organic passivation layer (140),where a first part of the organic passivation layer (140) is positioned laterally between the contact metallisation layer (120) and the inorganic passivation structure (130), so that the contact metallisation layer (120) and the inorganic passivation structure (130) are interdependent,and a second part of the organic passivation layer (140) is positioned on top of the inorganic passivation structure (130) and the first part of the organic passivation layer is positioned vertically closer to the semiconductor substrate (110) than the second part of the organic passivation layer,where a third of the organic passivation layer (140) is positioned at the top of the contact metallisation layer (120).