EDUCATION OF HYBRID ISOLATION REGIONS BY EXPERIENCE AND NEW DECISION

摘要

A process involves the formation of a semiconductor fin that is higher than the tops of isolation regions.The isolation regions extend into a semiconductor substrate.The process also includes etching a section of the semiconductor fins to form a ditch, filling the ditch with a first dielectric material, the first dielectric material having a first band distance, and conducting a separation process,to save the first dielectric material.A separation is formed between opposite sections of the isolation regions.The gap is filled with a second dielectric material.The first dielectric material and the second dielectric material form an additional isolation region in combination.The second dielectric material has a second band distance smaller than the first band distance.