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THREE-DIMENSIONAL MEMORY DEVICE EMPLOYING THINNED INSULATING LAYERS AND METHODS FOR FORMING THE SAME
THREE-DIMENSIONAL MEMORY DEVICE EMPLOYING THINNED INSULATING LAYERS AND METHODS FOR FORMING THE SAME
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机译:三维存储器件采用稀疏的绝缘层和用于形成相同的方法
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摘要
A three-dimensional memory device includes an alternating stack of word lines and at least one insulating layers or air gaps located over a substrate, a memory opening fill structure extending through the alternating stack. The memory opening fill structure includes a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. The word lines are thicker than the insulating layers or air gaps.
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