首页> 外国专利> THREE DIMENSIONAL FLASH MEMORY WITH BIT LINE FOR COST REDUCTION AND MANUFACTURING METHOD THEREOF

THREE DIMENSIONAL FLASH MEMORY WITH BIT LINE FOR COST REDUCTION AND MANUFACTURING METHOD THEREOF

机译:具有位线的三维闪存,用于降低成本和制造方法

摘要

Disclosed are a three-dimensional flash memory having a cost-saving bit line structure and a method for manufacturing the same. According to an embodiment, a three-dimensional flash memory includes: a substrate; at least one string extending in one direction on the substrate; at least one plug wiring formed on the at least one string; and at least one bit line connected to the at least one string through the at least one plug wiring, wherein the at least one bit line does not pass through components other than the at least one plug wiring, and the at least It may be characterized in that it is directly connected to the at least one string through only one plug wire.
机译:公开了一种具有成本节省成本的位线结构的三维闪存和制造方法。 根据一个实施例,三维闪存包括:基板; 至少一个串在基板上沿一个方向延伸; 在至少一个字符串上形成至少一个插头布线; 并且至少一个通过至少一个插头布线连接到至少一个串的比特线,其中至少一个位线不会通过除至少一个插头布线之外的组件,并且至少它可以表征 其点仅通过一个插头线直接连接到至少一个串。

著录项

  • 公开/公告号KR102316535B1

    专利类型

  • 公开/公告日2021-10-25

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR1020200053105

  • 发明设计人 송윤흡;송창은;

    申请日2020-05-04

  • 分类号H01L27/11582;H01L23/528;H01L27/11565;H01L27/1157;

  • 国家 KR

  • 入库时间 2022-08-24 21:52:33

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