BISMUTH FERRITE FILM MATERIAL, METHOD FOR INTEGRALLY PREPARING BISMUTH FERRITE FILM ON SILICON SUBSTRATE AT LOW TEMPERATURE, AND APPLICATION

摘要

Disclosed in the present invention are a bismuth ferrite film material, a method for integrally preparing a bismuth ferrite film on a silicon substrate at a low temperature, and an application. The method comprises: under the condition of 300-400℃, a bottom electrode, a buffer layer, and a bismuth ferrite film being sequentially subjected to magnetron sputtering on the surface of a base body from bottom to top; reducing the temperature to the room temperature; a top electrode being subjected to magnetron sputtering on the surface of the bismuth ferrite film, and the buffer layer being made of conductive oxide which can be matched with bismuth ferrite lattices and is of a perovskite structure. According to the present invention, the temperature for preparing the bismuth ferrite film material can be reduced to 450℃ or below, and the bismuth ferrite film material has high polarization strength.