METHOD FOR PREPARING LARGE-SIZE SINGLE CRYSTAL

摘要

A method for preparing a large-size single crystal, belonging to the field of semiconductor material preparation, and particularly relating to a method for preparing a large-size single crystal from a plurality of small-size single crystals in form of a solid state connection. The method comprises the following steps: material selection: selecting semiconductor single crystal blocks having integrally similar physical characteristics and basically consistent crystal-orientation precision of connecting surfaces; connecting surface treatment: carrying out orientation, polishing and acid pickling treatments on the connecting surfaces of the semiconductor single crystal blocks; single crystal connection: connecting the connecting surfaces of the treated single crystal blocks to each other; and single crystal splicing: applying specific pressure to the connected single crystal blocks in a vacuum clean environment or in a volatile atmosphere to complete the preparation of the large-size single crystal. The method has the beneficial effects that small-size single crystal blocks are connected to prepare a large-size single crystal, the device needed is simple, the preparation process is simple to control, and theoretically, single crystals of any size can be prepared.