ALGAINP-BASED LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR

摘要

An AlGaInP-based light emitting diode chip and a manufacturing method therefor, relating to the technical field of semiconductors. The AlGaInP-based light emitting diode chip comprises: a transition bonding layer (110) arranged between a sapphire substrate (301) and an epitaxial layer, and a composite bonding layer (201) arranged between the sapphire substrate (301) and the transition bonding layer (110). The composite bonding layer (201) is an Al2O3/Si3N4/SiO2 composite layer, wherein Al2O3 in the composite bonding layer (201) is in contact with the transition bonding layer (110). The transition bonding layer (110) and the layer of the epitaxial layer contacting the transition bonding layer (110) are both P-type Gap layers. The AlGaInP-based light emitting diode chip can improve the bonding yield between the sapphire substrate (301) and the epitaxial layer.