METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE, AND METHOD FOR FORMING ALUMINUM NITRIDE LAYER

摘要

The problem to be solved by the present invention is to provide a novel technology capable of manufacturing a large-diameter AIN substrate. The present invention pertains to a method for manufacturing an AIN substrate, the method including a crystal growth step S30 for forming an AIN layer 20 on a SiC base substrate 10 having a through-hole 11. Furthermore, the present invention pertains to a method for manufacturing the AIN layer 20, the method including a through-hole formation step S10 for forming the through-hole 11 in the SiC base substrate 10 before forming the AIN layer 20 on the surface of the SiC base substrate 10.