首页>
外国专利>
SENSING SCHEME FOR STT-MRAM USING LOW-BARRIER NANOMAGNETS
SENSING SCHEME FOR STT-MRAM USING LOW-BARRIER NANOMAGNETS
展开▼
机译:使用低屏障纳米磁珠的STT-MRAM传感方案
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present disclosure relates to a structure including a non-fixed read-cell circuit configured to switch from a first state to a second state based on a state of a memory cell to generate a sensing margin.
展开▼