FABRICATION METHOD OF GESN ALLOYS WITH HIGH TIN COMPOSITION AND SEMICONDUCTOR LASER REALIZED WITH SUCH METHOD

摘要

The invention provides a method to realize a short-wavelength light source and comprises the deposition of a Ge-based buffer layer and a GeSn-based emitter layer. The buffer layer and the emitter layer are annealed by using a high power light source operated at very short pulses duration allowing for localized high temperature without hampering the underlying CMOS circuit. The invention is also achieved by a semiconductor light source, such as a laser or a LED, realized with the method of the invention.