首页> 外国专利> Voltage starved passgate with IR drop

Voltage starved passgate with IR drop

机译:用红外线滴加电压

摘要

Aspects of the invention relate to an apparatus having a transmission gate coupled to a delay element and including a first transistor and a second transistor. A first node is coupled to a first gate of the first transistor, a first current source, and a first resistive element, an opposite end of the first resistive element being coupled to a ground potential. A second node is coupled to a second gate of the second transistor, a second current source, and a second resistive element, an opposite end of the second resistive element being coupled to a power supply.
机译:本发明的各方面涉及一种具有耦合到延迟元件并且包括第一晶体管和第二晶体管的传输栅极的装置。 第一节点耦合到第一晶体管,第一电流源和第一电阻元件的第一栅极,第一电阻元件的相对端耦合到地电位。 第二节点耦合到第二晶体管的第二栅极,第二电流源和第二电阻元件,第二电阻元件的相对端耦合到电源。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号