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WORK FUNCTION METAL PATTERNING FOR NANOSHEET CFETS
WORK FUNCTION METAL PATTERNING FOR NANOSHEET CFETS
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机译:纳米片CFET的工作功能金属图案化
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摘要
Semiconductor devices, and methods of forming the same, include forming a stack of channel layers, including an upper device region and a lower device region. The upper device region is separated from the lower device region by a dielectric spacer layer. A first work function metal layer is formed on the channel layers in the lower device region. A height of the first work function metal layer does not rise above the dielectric spacer layer. A second work function metal layer is formed on the channel layers in the upper device region.
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