Chamber member of plasma source and pedestal with radially outward lift pin for parallel movement of substrate C-ring

摘要

PROBLEM TO BE SOLVED: To improve the substrate etching uniformity, such as edge uniformity or adjustable radial direction's uniformity.SOLUTION: A substrate processing chamber has a lower chamber region 102 and an upper chamber region 104. The lower chamber region is defined by chamber sidewall surfaces 108, a chamber bottom surface 110, and a lower surface of a gas distribution device 114. The upper chamber region is defined by an upper surface of the gas distribution device and an inner surface of an upper portion 118. A second annular support 125 defines one or more spaced holes 127 for delivering a process gas from a gas flow channel 129 to the lower chamber region. An inductive coil 140 may be arranged around an outer portion of the upper portion. When energized, the inductive coil creates an electromagnetic field inside the upper portion. A gas injector 142 injects a gas mixture from a gas delivery system 150-1.SELECTED DRAWING: Figure 1