Manufacturing method of composite Gan nanocolumn

摘要

Disclosed is a method for growing a semiconductor composite nanocolumn with a uniform alignment and uniform cross-section on a substrate. The method includes: (a) forming a pyramidal pit with facets on the substrate surface; (b) initiating nucleation on the facets of the pits; and (c) nuclei toward the center of the pits. Accelerating the growth, coalescing the nuclei by twinning and then growing them together as a composite nanocolumn. Multiple quantum well core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, the formation of a continuous semiconductor epitaxial layer by nanocolumn overgrowth can facilitate the fabrication of high quality planar device structures or light emitting structures.