首页> 外国专利> DATA STORAGE INCLUDING RECOVERY FUNCTION FOR THRESHOLD VOLTAGE DISTRIBUTION CHANGE OF MEMORY CELLS ACCORDING TO APPLYING SURFACE MOUNTING TECHNOLOGY AND OPERATING METHOD THEREOF

DATA STORAGE INCLUDING RECOVERY FUNCTION FOR THRESHOLD VOLTAGE DISTRIBUTION CHANGE OF MEMORY CELLS ACCORDING TO APPLYING SURFACE MOUNTING TECHNOLOGY AND OPERATING METHOD THEREOF

机译:数据存储包括根据应用表面安装技术及其操作方法的存储器单元的阈值电压分布变化的恢复功能

摘要

In the data storage programming method according to an embodiment of the present invention, before applying the surface mount technology to the plurality of nonvolatile memories, memory cells of at least one nonvolatile memory among the plurality of nonvolatile memories are set as a first reference. and pre-programming with a first verify voltage greater than the voltage. According to an embodiment of the present invention, since the nonvolatile memory is pre-programmed in consideration of the change in threshold voltage distribution generated by applying the surface mount technology, boot fail can be prevented.
机译:在根据本发明实施例的数据存储编程方法中,在将表面安装技术应用于多个非易失性存储器之前,将多个非易失性存储器中的至少一个非易失性存储器的存储器单元设置为第一参考。 并使用第一验证电压大于电压的预编程。 根据本发明的实施例,由于考虑到通过施加表面安装技术产生的阈值电压分布的变化预先编程非易失性存储器,因此可以防止启动失败。

著录项

  • 公开/公告号KR102309841B1

    专利类型

  • 公开/公告日2021-10-12

    原文格式PDF

  • 申请/专利权人 삼성전자주식회사;

    申请/专利号KR20150118993

  • 发明设计人 심인보;윤재상;이두진;장영준;

    申请日2015-08-24

  • 分类号G11C16/04;G11C16/10;G11C16/30;G11C16/34;

  • 国家 KR

  • 入库时间 2022-08-24 21:37:36

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