首页> 外国专利> DATA STORAGE INCLUDING RECOVERY FUNCTION FOR THRESHOLD VOLTAGE DISTRIBUTION CHANGE OF MEMORY CELLS ACCORDING TO APPLYING SURFACE MOUNTING TECHNOLOGY AND OPERATING METHOD THEREOF

DATA STORAGE INCLUDING RECOVERY FUNCTION FOR THRESHOLD VOLTAGE DISTRIBUTION CHANGE OF MEMORY CELLS ACCORDING TO APPLYING SURFACE MOUNTING TECHNOLOGY AND OPERATING METHOD THEREOF

机译:应用表面安装技术及其操作方法,包括存储功能的阈值电压分布变化的恢复功能的数据存储

摘要

A method of programming data storage according to an embodiment of the present invention includes a step of pre-programming the memory cells of at least one nonvolatile memory among a plurality of nonvolatile memories, with a first verification voltage that is greater than the voltage, before applying a surface mounting technique to the plurality of nonvolatile memories. According to the embodiment of the present invention, since the nonvolatile memories are pre-programmed in consideration of a change of the threshold voltage distribution generated by applying the surface mounting technique, boot failure can be prevented.;COPYRIGHT KIPO 2017
机译:根据本发明的实施例的对数据存储装置进行编程的方法包括以下步骤:在第一非易失性存储器中的第一验证电压大于电压之前,对多个非易失性存储器中的至少一个非易失性存储器的存储单元进行预编程。将表面安装技术应用于多个非易失性存储器。根据本发明的实施例,由于考虑到通过应用表面安装技术产生的阈值电压分布的变化来对非易失性存储器进行预编程,因此可以防止引导失败。; COPYRIGHT KIPO 2017

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