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LED wafer, LED wafer detection device, and LED wafer detection method

机译:LED晶圆,LED晶片检测装置和LED晶片检测方法

摘要

An LED wafer, an LED wafer detection device and an LED wafer detection method are provided. The LED wafer includes a wafer base, a plurality of LED chips, a plurality of positive test circuit layers, a plurality negative test circuit layers, a plurality of positive test contacts, and a plurality of negative test contacts. Each LED chip has a positive contact and a negative contact respectively electrically connected to the corresponding positive test circuit layer and the corresponding negative test circuit layer. The positive test contacts are respectively electrically connected to the positive test circuit layers, and the negative test contacts are respectively electrically connected to the negative test circuit layers. Whereby, when inputting an electric current into the positive test contacts, and then outputting the electric current from the negative test contacts, each LED chip is excited to generate a light source.
机译:提供LED晶片,LED晶片检测装置和LED晶片检测方法。 LED晶片包括晶片基底,多个LED芯片,多个正测试电路层,多个负测试电路层,多个正测试触点以及多个负测试触点。 每个LED芯片具有正接触和分别电连接到相应的正测试电路层和相应的负测试电路层的负触点。 正测试触点分别电连接到正测试电路层,负测试触点分别电连接到负测试电路层。 由此,当将电流输入到正测试触点时,然后从负测试触点输出电流,每个LED芯片都很激励以产生光源。

著录项

  • 公开/公告号US11143692B2

    专利类型

  • 公开/公告日2021-10-12

    原文格式PDF

  • 申请/专利权人 ASTI GLOBAL INC. TAIWAN;

    申请/专利号US202016811036

  • 发明设计人 CHIEN-SHOU LIAO;TE-FU CHANG;CHUN-AN LU;

    申请日2020-03-06

  • 分类号G01R31/26;H01L21/66;

  • 国家 US

  • 入库时间 2022-08-24 21:36:54

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