2 Two dimensional2D material based line conductive layer contact structure electronic device including the same and method of manufacturing electronic device

摘要

Disclosed are a two-dimensional material-based interconnection conductive layer contact structure, an electronic device including the same, and a manufacturing method thereof. An example of the disclosed electronic device is a 2D material-based field effect transistor, which includes a substrate, first to third 2D material layers formed on the substrate, an insulating layer formed on the first 2D material layer, and the second 2D material layer. a source electrode formed on the material layer, a drain electrode formed on the third 2D material layer, and a gate electrode formed on the insulating layer. The first 2D material layer is a 2D material layer exhibiting semiconductor properties, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.