首页> 外国专利> PROCESS FOR MANUFACTURING A PIEZOELECTRIC STRUCTURE FOR A RADIOFREQUENCY DEVICE, WHICH STRUCTURE CAN BE USED TO TRANSFER A PIEZOELECTRIC LAYER, AND PROCESS FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER

PROCESS FOR MANUFACTURING A PIEZOELECTRIC STRUCTURE FOR A RADIOFREQUENCY DEVICE, WHICH STRUCTURE CAN BE USED TO TRANSFER A PIEZOELECTRIC LAYER, AND PROCESS FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER

机译:用于制造用于射频装置的压电结构的方法,该结构可用于传递压电层,以及用于传递这种压电层的方法

摘要

A process for manufacturing a piezoelectric structure (10) for a radiofrequency device, said process being characterized in that it comprises providing a substrate of piezoelectric material (20), providing a carrier substrate (100), providing a dielectric bonding layer (1001) on the substrate of piezoelectric material (20), a step (1') of joining the substrate of piezoelectric material (20) to the carrier substrate (100) via the dielectric bonding layer (1001), and a thinning step (2') for forming the piezoelectric structure (10), which consists of a layer of piezoelectric material (200) joined to a carrier substrate (100) via the dielectric bonding layer (1001).
机译:用于制造用于射频装置的压电结构(10)的过程,所述工艺的特征在于,它包括提供压电材料(20)的基板,提供载体基板(100),提供介电键合层(1001) 压电材料(20)的基板,通过介电接合层(1001)将压电材料(20)的基板连接到载体基板(100),以及用于薄的步骤(2') 形成压电结构(10),其包括通过介电键合层(1001)连接到载体基板(100)的压电材料层(200)组成。

著录项

  • 公开/公告号WO2021191302A1

    专利类型

  • 公开/公告日2021-09-30

    原文格式PDF

  • 申请/专利权人 SOITEC;

    申请/专利号WO2021EP57617

  • 申请日2021-03-24

  • 分类号H01L41/312;H01L41/313;H01L21/20;

  • 国家 EP

  • 入库时间 2022-08-24 21:25:06

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