METHOD AND STRUCTURE TO CONTACT TIGHT PITCH CONDUCTIVE LAYERS WITH GUIDED VIAS USING ALTERNATING HARDMASKS AND ENCAPSULATING ETCHSTOP LINER SCHEME

摘要

An interconnect structure having alternating dielectric caps and an etchstop liner for a semiconductor device and methods for fabricating such devices are described. According to one embodiment, the interconnect structure may include an interlayer dielectric (ILD) having a first hardmask layer, the first hardmask layer being over a top surface of the ILD. The interconnect structure may also include one or more first interconnect lines within the ILD. A first dielectric cap may be positioned over a top surface of each of the first interconnect lines. Further embodiments include in the ILD one or more second interconnect lines arranged in an alternating pattern with the first interconnect lines. A second dielectric cap may be formed over a top surface of each of the second interconnect lines. Embodiments may also include an etch stop liner formed over top surfaces of the first dielectric caps.