Nitride crystal substrate manufacturing method, laminated structure manufacturing method, nitride crystal substrate and laminated structure

摘要

PROBLEM TO BE SOLVED: To obtain a nitride crystal substrate having good crystal quality. A method for producing a nitride crystal substrate using a vapor phase growth method, which comprises a step of preparing a base structure composed of a single crystal of a Group III nitride semiconductor whose surface layer contains at least manganese, and a base structure. A step of epitaxially growing a main growth layer composed of a single crystal of a group III nitride semiconductor having a manganese concentration lower than the manganese concentration of the surface layer on the underlying structure, and at least one nitride crystal self-supporting from the main growth layer. It has a step of acquiring a substrate. [Selection diagram] Fig. 1