POWER SEMICONDUCTOR DEVICE WITH TRENCHGATE STRUCTURES WITH LONGITUDINAL AXES INCLINED TO A MAIN CRYSTAL DIRECTION AND MANUFACTURING PROCESS

摘要

A semiconductor device, comprising: a semiconductor body (100) with a first main crystal direction (401) parallel to a horizontal plane, trench gate structures (150) with a longitudinal extension greater than a width in the horizontal plane, with longitudinal axes (159) of the trench gate structures (150) the first main crystal direction (401) are inclined by an inclination angle (φ) of at least 2 degrees and at most 30 degrees in the horizontal plane, and mesa parts (170) between adjacent trench gate structures (150), first side wall sections (104a) of first mesa side walls (104) Main crystal planes are parallel to the first main crystal direction (401) and second side wall sections (104b), which are inclined to the first side wall sections (104a), connect the first side wall sections (104a).