Advanced gate driver for silicon carbide bipolar junction transistors

摘要

The gate driver circuit includes a sensor, an amplifier, a regulator and a gate driver. The sensor is configured to detect the collector-emitter voltage and is connected between the first and second registers connected in series and the first and second registers connected in series. It comprises a high voltage diode and a first capacitor connected in parallel to a second register. The amplifier is configured to amplify the sensor output voltage, a non-inverting operational amplifier controlled by multiple registers, a voltage follower connected to the output terminal of the non-inverting operational amplifier via a first diode, and a first diode. And a third register connected to the voltage follower. The regulator is configured to adjust the regulator output voltage based on the amplifier voltage. The gate driver is configured to connect / disconnect the regulator output voltage from the BJT base terminal. [Selection diagram] Figure 2