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Three-dimensional memory including molybdenum wiring layer having oxygen impurity and method for manufacturing the same
Three-dimensional memory including molybdenum wiring layer having oxygen impurity and method for manufacturing the same
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机译:包括具有氧杂质的钼布线层的三维记忆及其制造方法
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摘要
A semiconductor device includes a substrate. The semiconductor device further includes a wiring layer provided on the substrate, the wiring layer including a molybdenum layer including oxygen atoms as an impurity.
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